PJQ4446P mosfet equivalent, 40v n-channel mosfet.
* RDS(ON), VGS@10V, ID@8A<9mΩ
* RDS(ON), [email protected], ID@4A<13mΩ
* Advanced Trench Process Technology
* High density cell design for ultralow on-resistance <.
shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the .
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